Vishay Intertechnology, Inc. Stock News

Devices Feature Low TCR to ± 15 ppm/K, Tight Tolerances to ± 0.1 %, and High Resistance of Up to 10 MΩ in 0102, 0204, and 0207 Case Sizes Devices Feature Low TCR to ± 15 ppm/K, Tight Tolerances to ± 0.1 %, and High Resistance of Up to 10 MΩ in 0102, 0204, and 0207 Case Sizes

Space-Saving, Industrial-Grade Device Combines Fast Turn-on Time of 0.3 ms Typical With Low Leakage Current of 2 nA Space-Saving, Industrial-Grade Device Combines Fast Turn-on Time of 0.3 ms Typical With Low Leakage Current of 2 nA

NEW YORK , Dec. 6, 2024 /PRNewswire/ -- S&P Dow Jones Indices ("S&P DJI") will make the following changes to the S&P 500, S&P MidCap 400, and S&P SmallCap 600 indices effective prior to the open of trading on Monday, December 23, to coincide with the quarterly rebalance. The changes ensure each index is more representative of its market capitalization range.

Featuring a VCSEL and Smart Dual I²C Slave Address, the VCNL36828P Offers Idle Current Down to 5 μA in a Compact 2.0 mm x 1.0 mm x 0.5 mm SMD Package Featuring a VCSEL and Smart Dual I²C Slave Address, the VCNL36828P Offers Idle Current Down to 5 μA in a Compact 2.0 mm x 1.0 mm x 0.5 mm SMD Package

Space-Saving Device Features BWL Design and High ID to 795 A to Increase Power Density, While Low RthJC of 0.21 ° C/W Improves Thermal Performance

Cost- and Space-Saving Devices Shortlisted in “Passive and Electromechanical Product of the Year” Category Cost- and Space-Saving Devices Shortlisted in “Passive and Electromechanical Product of the Year” Category

Rated to 100 000 Pulses, AEC-Q200 Qualified Device Provides High Power Dissipation of 35 W Rated to 100 000 Pulses, AEC-Q200 Qualified Device Provides High Power Dissipation of 35 W

Offered in PowerPAK® SO-8S Package, TrenchFET® Device's Low RthJC of 0.45 °C/W Enables High ID to 144 A to Increase Power Density Offered in PowerPAK® SO-8S Package, TrenchFET® Device's Low RthJC of 0.45 °C/W Enables High ID to 144 A to Increase Power Density